- 您现在的位置：买卖IC网 > PDF目录36707 > APT20GT60AR 30 A, 600 V, N-CHANNEL IGBT, TO-204AE PDF资料下载
参数资料
| 型号： | APT20GT60AR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 30 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| 封装： | HERMETIC SEALED, TO-3, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 27K |
| 代理商： | APT20GT60AR |
PRELIMINARY
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
APT20GT60AR
UNIT
°C/W
MIN
TYP
MAX
0.90
80
Characteristic
Junction to Case
Junction to Ambient
Symbol
RQJC
RQJA
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 10W
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
1100
110
65
95
40
8
10
34
115
125
15
190
30
0.55
0.45
1.0
15
18
160
25
0.60
4
UNIT
pF
nC
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, RGE = 25
W, L = 200H, T
j = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5969
Rev
-
6-2000
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GT60CR | 25 A, 600 V, N-CHANNEL IGBT, TO-254AA |
| APT20M11JVFR | 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M120JCU2 | 20 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M13PVR | 120 A, 200 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M16B2LLG | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT20GT60BRDQ1G | 功能描述:IGBT 600V 43A 174W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GT60BRG | 功能描述:IGBT 600V 43A 174W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GT60CR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
发布紧急采购，3分钟左右您将得到回复。