- 您现在的位置：买卖IC网 > PDF目录51263 > APT20GT60BRDQ1G 43 A, 600 V, N-CHANNEL IGBT, TO-247 PDF资料下载
参数资料
| 型号： | APT20GT60BRDQ1G |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 43 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 428K |
| 代理商： | APT20GT60BRDQ1G |
052-6265
Rev
B
12-2005
APT20GT60BRDQ1(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 0.5mA)
Gate Threshold Voltage (V
CE = VGE, I C = 500A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 20A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 20A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT20GT60BRDQ1(G)
600
±30
43
20
80
80A @ 600V
174
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
1.6
2.0
2.5
2.8
50
1000
±100
600V
APT20GT60BRDQ1
APT20GT60BRDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
TO-2
47
G
C
E
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GT60BRG | 43 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GT60BR | 43 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20M10JFLL | 185 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M10JLL | 180 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M11JFLL | 176 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GT60BRG | 功能描述:IGBT 600V 43A 174W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GT60CR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60KR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60KRG | 功能描述:IGBT 600V 43A 174W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20M10JFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
发布紧急采购，3分钟左右您将得到回复。