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参数资料
| 型号： | APT20M16B2LLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | B2, TMAX-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 165K |
| 代理商： | APT20M16B2LLG |
050-7014
Rev
C
6-2004
APT20M16 B2LL_LLL
Typical Performance Curves
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
I
D = 50A
V
GS = 10V
300
250
200
150
100
50
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
300
250
200
150
100
50
0
140
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
7V
TJ = +25°C
TJ = -55°C
8V
6.5V
7.5V
9V
VGS=15V
8.5V
TJ = +125°C
10V
VGS=10V
VGS=20V
Lead Limited
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
NORMALIZED TO
V
GS = 10V @
50A
0.0271
0.0656
0.0859
0.00899F
0.0210F
0.293F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT20M16LLL | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M16B2LL | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M16B2LL | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M16LLLG | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M16LLL | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20M16LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT20M16LFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT20M16LLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT20M16LLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT20M18B2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
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