参数资料
型号: APT20M20LLLG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封装: TO-264, 3 PIN
文件页数: 2/5页
文件大小: 159K
代理商: APT20M20LLLG
050-7013
Rev
D
4-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
DYNAMICCHARACTERISTICS
APT20M20B2LL_LLL
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID100A)
Reverse Recovery Time (I
S = -ID100A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID100A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 6
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
100
400
1.3
284
3.06
5
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 7
Turn-off Switching Energy
Turn-on Switching Energy 7
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 100V
I
D = 100A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 100V
I
D = 100A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 130V, VGS = 15V
I
D = 100A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 130V, VGS = 15V
I
D = 100A, RG = 5
MIN
TYP
MAX
6850
2180
95
110
43
47
13
40
26
2
465
455
920
915
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.50mH, RG = 25, Peak IL = 100A
5 The maximum current is limited by lead temperature
6 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S -ID75A
di/dt ≤ 700A/s V
R VDSS
T
J ≤ 150°C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
相关PDF资料
PDF描述
APT20M20B2LL 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M20LFLLG 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT20M20LFLL 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT20M20B2FLLG 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M20B2FLL 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APT20M21DN 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP
APT20M21JN 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 120A I(D)
APT20M22 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M22B2VFR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M22B2VFRG 功能描述:MOSFET N-CH 200V 100A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件