参数资料
型号: APT20M22B2VFR
元件分类: JFETs
英文描述: 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-247, TMAX-3
文件页数: 2/4页
文件大小: 64K
代理商: APT20M22B2VFR
APT20M22B2VFR
050-5625
Rev
A
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 6
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
MIN
TYP
MAX
8500
10200
1950
2730
560
840
290
435
66
100
120
180
16
32
25
50
48
72
510
UNIT
pF
nC
ns
MIN
TYP
MAX
100
400
1.5
5
Tj = 25°C
220
Tj = 125°C
420
Tj = 25°C
0.8
Tj = 125°C
3.0
Tj = 25°C
10
Tj = 125°C
18
1 Repetitive Rating: Pulse width limited by maximum junction
4 Starting Tj = +25°C, L = 500H, RG = 25, Peak IL = 100A
temperature.
5 These dimensions are equal to the TO-247 without mounting hole
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
6 IS ≤ -ID [Cont.], di/dt = 100A/s, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0,
3 See MIL-STD-750 Method 3471
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
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APT20M22JVFR 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
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