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参数资料
| 型号： | APT20M22B2VR |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CLIP MOUNTED TO-247, TMAX-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 63K |
| 代理商： | APT20M22B2VR |
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 0.6
MIN
TYP
MAX
8500
10200
1950
2730
560
840
290
435
66
100
120
180
16
32
25
50
48
72
510
UNIT
pF
nC
ns
APT20M22B2VR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5610
Rev
C
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
100
400
1.5
330
5.8
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1 Repetitive Rating: Pulse width limited by maximum Tj
4 Starting Tj = +25°C, L = 500H, RG = 25, Peak IL = 100A
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
5 These dimensions are equal to the TO-247AD without mounting hole.
3 See MIL-STD-750 Method 3471
6 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1 6 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20M22B2VRG | 功能描述:MOSFET N-CH 200V 100A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| APT20M22JVR | 功能描述:MOSFET N-CH 200V 97A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT20M22JVRU2 | 功能描述:MOSFET N-CH 200V 97A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APT20M22JVRU3 | 功能描述:MOSFET N-CH 200V 97A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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