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参数资料
| 型号： | APT20M40BVR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 59 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件页数： | 4/4页 |
| 文件大小： | 92K |
| 代理商： | APT20M40BVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100
200
.01
.1
1
10
50
0
50
100
150
200
250
0
0.4
0.8
1.2
1.6
2.0
APT20M40BVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
300
100
50
10
5
1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
10,000
5,000
1,000
500
100
300
100
50
10
5
1
050-5620
Rev
A
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=160V
VDS=40V
10
S
100
S
1mS
10mS
100mS
DC
VDS=100V
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
TO-247 Package Outline
相关PDF资料 |
PDF描述 |
|---|---|
| APT20M45BNFR-BUTT | 58 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M60BNFR-GULLWING | 50 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M60BNFR-BUTT | 50 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M45BNFR-GULLWING | 58 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M45BNR-BUTT | 58 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20M40BVRG | 功能描述:MOSFET N-CH 200V 59A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT20M40DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP |
| APT20M40HVR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 45A I(D) | TO-258 |
| APT20M40JN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 77A I(D) |
| APT20M42HVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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