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参数资料
| 型号： | APT20M45BVR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 349K |
| 代理商： | APT20M45BVR |
050-5514
Rev
D
3
-
2010
Absolute Maximum Ratings
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
Parameter
Ratings
Unit
V
DSS
Drain Source Voltage
200
Volts
I
D
Continuous Drain Current @ T
C = 25°C
56
Amps
I
DM
Pulsed Drain Current 1
224
V
GS
Gate-Source Voltage Continuous
±30
Volts
V
GSM
Gate-Source Voltage Transient
±40
P
D
Total Power Dissipation @ T
C = 25°C
300
Watts
Linear Derating Factor
2.4
W/C°
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
I
AR
Avalanche Current 1 (Repetitive and Non-Repatitive)
56
Amps
E
AR
Repetitive Avalanche Energy 1
30
mJ
E
AS
Single Pulse Avalanche Energy 4
1300
FEATURES
Faster switching
Lower Leakage
100% Avalanche tested
Popular TO-247 Package
RoHS compliant
200V, 56A, 0.045
Ω
APT20M45BVR(G)
POWER MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect, increase
packing density and reduces the on-resistance. Power MOS V also achieves
faster switching speeds through optimized gate layout.
Microsemi Website - http://www.microsemi.com
POWER MOS V
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol
Parameter
Min
Typ
Max
Unit
BV
DSS
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250μA)
200
Volts
I
D(on)
On State Drain Current 2 (V
DS > ID(on) x RDS(on) Max, VGS = 10V)
56
Amps
R
DS(on)
Drain-Source On-State Resistance 2 (V
GS = 10V, 0.5 ID[Cont.])
0.045
Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
25
μA
Zero Gate Voltage Collector Current (V
GS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
I
GSS
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS = VGS, ID = 1.0mA)
2
4
Volts
TO-247
D3
APT20M45BVR(G)
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20M45BVRG | 功能描述:MOSFET N-CH 200V 56A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT20M45JN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 73A I(D) |
| APT20M45SNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-263AB |
| APT20M45SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT20M45SVFRG | 功能描述:MOSFET N-CH 200V 56A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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