- 您现在的位置：买卖IC网 > PDF目录36709 > APT20N60BC3 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF资料下载
参数资料
| 型号： | APT20N60BC3 |
| 元件分类： | JFETs |
| 英文描述： | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 200K |
| 代理商： | APT20N60BC3 |
050-7145
Rev
D
4-2006
APT20N60B_SC3
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT15DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
TJ = 125 C
Gate Voltage
Collector Current
Collector Voltage
90%
10%
0
t
d(off)
t
f
Switching Energy
T
J = 125 C
Collector Current
Collector Voltage
Gate Voltage
10%
td(on)
5%
10%
5 %
tr
90%
Switching Energy
相关PDF资料 |
PDF描述 |
|---|---|
| APT20N60BC3 | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60SCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20N60BCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20N60BC3G | 功能描述:MOSFET N-CH 600V 20.7A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT20N60BCF | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60BCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SC3 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 20.7A 3-Pin(2+Tab) D3PAK |
| APT20N60SC3G | 功能描述:MOSFET N-CH 600V 20.7A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。