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参数资料
| 型号： | APT20N60CC3 |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | TO-254, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 91K |
| 代理商： | APT20N60CC3 |
TO-254
050-7137
Rev
A
4-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
Ultra low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
Hermetic TO-254 Package
APT20N60CC3
600V
14A
0.210
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID =13.1A)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
600
0.18
0.21
0.05
25
250
±100
2.1
3
3.9
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS = 480V, ID = 14A, TJ = 125°C)
Repetitive Avalanche Current 6
Repetitive Avalanche Energy 6
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
APT20N60CC3
600
14
42
±20
±30
104
0.83
-55 to 150
300
50
20
1
690
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
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相关代理商/技术参数 |
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