- 您现在的位置：买卖IC网 > PDF目录36709 > APT20N60SCFG 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT20N60SCFG |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 190K |
| 代理商： | APT20N60SCFG |
050-7235
Rev
A
5-2005
FINAL DATA SHEET WITH MOS 7 FORMAT
600V 20A 0.220
APT20N60BCF
APT20N60SCF
APT20N60BCFG*
APT20N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 13A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 20A, TJ = 125°C)
Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT20N60BCF(G)_SCF(G)
600
20
13
60
±30
208
1.67
-55 to 150
260
80
20
1
690
Ultra Low RDS(ON)
Intrinsic Fast-Recovery Body Diode
Low Miller Capacitance
Extreme Low Reverse Recovery Charge
Ultra Low Gate Charge, Qg
Ideal For ZVS Applications
Avalanche Energy Rated
Popular TO-247 or Surface Mount D3 Package
Extreme dv/dt Rated
Super Junction FREDFET
MIN
TYP
MAX
600
0.220
2.1
1700
±100
3
4
5
APT Website - http://www.advancedpower.com
C
Power Semiconductors
O
O LMOS
G
D
S
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
TO-247
D3PAK
相关PDF资料 |
PDF描述 |
|---|---|
| APT22M100JCU2 | 22 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT23H50S | 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT23H50B | 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT25GF120JCU2 | 45 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B2DQ2G | 67 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
| APT20SCD120BHB | 制造商:Microsemi Corporation 功能描述: |
| APT20SCD120S | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
| APT20SCD65K | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE |
| APT21M100J | 功能描述:MOSFET N-CH 1000V 21A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 8™ 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。