- 您现在的位置：买卖IC网 > PDF目录36709 > APT23H50S (MICROSEMI POWER PRODUCTS GROUP) 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT23H50S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D3PAK, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 263K |
| 代理商： | APT23H50S |
Static Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT23H50B_S
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 8.18mH, RG = 4.7, IAS = 11A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -8.43E-8/VDS^2 + 1.96E-8/VDS + 5.61E-11.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
G
D
S
Unit
V
V/°C
V
mV/°C
A
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
C
A
V/ns
Min
Typ
Max
500
0.60
0.22
0.26
3
4
5
-10
250
1000
±100
Min
Typ
Max
17
3630
50
390
225
115
90
21
41
16
19
41
14
Min
Typ
Max
23
70
1.0
170
320
0.50
1.20
5.7
7.8
30
Test Conditions
V
GS = 0V, ID = 250A
Reference to 25°C, I
D = 250A
V
GS = 10V, ID = 11A
V
GS = VDS, ID = 1mA
V
DS = 600V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 11A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 333V
V
GS = 0 to 10V, ID = 11A,
V
DS = 250V
Resistive Switching
V
DD = 333V, ID = 11A
R
G = 4.7
6
, V
GG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 11A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
I
SD = 11A
3
T
J = 25°C
di
SD/dt = 100A/s
T
J = 125°C
V
DD = 100V
T
J = 25°C
T
J = 125°C
I
SD ≤ 11A, di/dt ≤1000A/s, VDD = 333V,
T
J = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
050-8140
Rev
A
6-2007
相关PDF资料 |
PDF描述 |
|---|---|
| APT23H50B | 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT25GF120JCU2 | 45 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B2DQ2G | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B2DQ2 | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B2DQ2 | 67 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT24F50B | 功能描述:MOSFET N-CH 500V 24A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT24F50B_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET |
| APT24F50S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 500V 24A D3PAK |
| APT24M120B2 | 功能描述:MOSFET N-CH 1200V 24A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT24M120L | 功能描述:MOSFET N-CH 1200V 24A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。