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参数资料
| 型号： | APT25GN120B2DQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 67 A, 1200 V, N-CHANNEL IGBT |
| 封装： | T-MAX, 3 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 220K |
| 代理商： | APT25GN120B2DQ2 |
050-7603
Rev
B
10-2005
APT25GN120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 112°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 25A
Forward Voltage
I
F = 50A
I
F = 25A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.46
2.98
1.83
APT25GN120B2DQ2(G)
40
63
210
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
26
-
350
-
570
-
4
-
430
-
2200
-
9
-
210
-
3400
-
29
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 40A, diF/dt = -200A/s
V
R = 800V, TC = 25°C
I
F = 40A, diF/dt = -200A/s
V
R = 800V, TC = 125°C
I
F = 40A, diF/dt = -1000A/s
V
R = 800V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.0442 °C/W
0.242 °C/W
0.324 °C/W
0.00222 J/°C
0.00586 J/°C
0.0596 J/°C
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT25GN120B2DQ2 | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120BG | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120SG | 67 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GN120B2DQ2G | 功能描述:IGBT 1200V 67A 272W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GN120BG | 功能描述:IGBT 1200V 67A 272W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GN120S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Utilizing the latest Field Stop and Trench Gate technologies |
| APT25GN120SG | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 67A 272W D3PAK 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
| APT25GP120B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
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