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参数资料
| 型号： | APT25GP120BDQ1 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 209K |
| 代理商： | APT25GP120BDQ1 |
050-7457
Rev
A
6-2005
APT25GP120BDQ1(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 350A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J,TSTG
T
L
APT25GP120BDQ1(G)
1200
±30
69
33
90
90A @ 960V
417
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Reverse Bias Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
350
3000
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 800V, 11A
Low Gate Charge
50 kHz operation @ 800V, 19A
Ultrafast Tail Current shutoff
RBSOA Rated
POWER MOS 7 IGBT
1200V
APT25GP120BDQ1
APT25GP120BDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
TO-2
47
G
C
E
相关PDF资料 |
PDF描述 |
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| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GT120BRDQ2 | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GT120BRDQ2G | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GP120BDQ1G | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP120BG | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP90B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDF1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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