- 您现在的位置：买卖IC网 > PDF目录36709 > APT26GU30K (MICROSEMI POWER PRODUCTS GROUP) 47 A, 300 V, N-CHANNEL IGBT, TO-220AB PDF资料下载
参数资料
| 型号： | APT26GU30K |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 47 A, 300 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 172K |
| 代理商： | APT26GU30K |
050-7466
Rev
B
4-2004
APT26GU30K_SA
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
APT15DS30
VCE
Figure 21, Inductive Switching Test Circuit
VCC
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220AC Package Outline
TO-263 (D2) Surface mount Package Outline
T
J = 125°C
10%
Switching Energy
10%
t
r
5%
t
d(on)
90%
Drain Current
DrainVoltage
GateVoltage
5%
Switching Energy
90%
t
d(off)
10%
t
f
0
10.06 (.396)
10.31(.406)
1.22 (.048)
1.32 (.052)
{3 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.330 (.013)
0.432 (.017)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
Collector (Heat
Sink)
Gate
Collector
Emitter
0.000 (.000)
0.254 (.010)
6.02 (.237)
6.17 (.243)
1.40 (.055)
1.65 (.065)
7.54 (.297)
7.68 (.303)
8.51 (.335)
8.76(.345)
0.762 (.030)
0.864 (.034)
{2 Plcs.}
0.050 (.002)
2.62 (.103)
2.72 (.107)
3.68 (.145)
6.27 (.247)
(Base of Lead)
Drain Current
DrainVoltage
GateVoltage
相关PDF资料 |
PDF描述 |
|---|---|
| APT26GU30SA | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
| APT26GU30SAG | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
| APT26M100JCU3 | 26 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT26RF40BN | 26 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT3010BNR-GULLWING | 35 A, 300 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT26GU30SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT26M100JCU2 | 功能描述:MOSFET N CH 1000V 26A SIC SOT227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 8™ 标准包装:10 系列:* |
| APT26M100JCU3 | 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1000V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT27 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT27GA90BD15 | 功能描述:IGBT 900V 48A 223W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。