参数资料
型号: APT30D120S
元件分类: 参考电压二极管
英文描述: 30 A, 1200 V, SILICON, RECTIFIER DIODE
封装: D3PAK-2
文件页数: 2/4页
文件大小: 129K
代理商: APT30D120S
APT30D120B(G)_S(G)
DYNAMIC CHARACTERISTICS
053-0016
Rev
C
4-2005
APT Reserves the right to change, without notice, the specications and information contained herein.
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
RθJC
RθJA
W
T
Torque
MIN
TYP
MAX
.61
40
0.22
5.9
10
1.1
UNIT
°C/W
oz
g
lbin
Nm
MIN
TYP
MAX
-
31
-
370
-
660
-
5
-
500
-
3450
-
12
-
220
-
4650
-
37
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/s
V
R = 800V, TC = 25°C
I
F = 30A, diF/dt = -200A/s
V
R = 800V, TC = 125°C
I
F = 30A, diF/dt = -1000A/s
V
R = 800V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
0.0442 °C/W
0.242 °C/W
0.324 °C/W
0.00222 J/°C
0.00586 J/°C
0.0596 J/°C
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
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