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参数资料
| 型号： | APT30GN60K |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 代理商： | APT30GN60K |
052-6296
Re
v
A
7-2008
APT30GN60K(G)
TYPICAL PERFORMANCE CURVES
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
3,000
1,000
500
100
50
10
100
90
80
70
60
50
40
30
20
10
0
C
,CAP
A
CIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5
10 15
20 25
30 35
40 45 50
55
F
MAX
,OPERA
TING
FREQ
UENCY
(kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
°C
T
C
= 75
°C
D = 50 %
V
CE
= 400V
R
G
= 4.3
Ω
130
50
10
5
1
0.5
0.1
0.05
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
C
res
C
oes
C
ies
0.239
0.244
0.258
0.00158
0.00349
0.0793
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
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