- 您现在的位置：买卖IC网 > PDF目录64116 > APT30GP60JDQ1G 67 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APT30GP60JDQ1G |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 67 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, ISOTOP-4 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 448K |
| 代理商： | APT30GP60JDQ1G |
050-7452
Rev
A
5-2005
APT30GP60JDQ1(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 118°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 30A
Forward Voltage
I
F = 60A
I
F = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
3.2
2.1
APT30GP60JDQ1(G)
15
26
110
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
15
-
19
-
21
-
2
-
105
-
250
-
5
-
55
-
420
-
15
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 15A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 15A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 15A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.913 °C/W
0.573 °C/W
0.216 °C/W
0.00132 J/°C
0.0302 J/°C
0.512 J/°C
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT30GT60BR | 64 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30M36JFLL | 76 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40GP60JDF2 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40GU60JU3 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40M70LVR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GP60LDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
| APT30GS60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
发布紧急采购，3分钟左右您将得到回复。