型号: | APT30GT60AR |
元件分类: | IGBT 晶体管 |
英文描述: | 40 A, 600 V, N-CHANNEL IGBT, TO-204AE |
封装: | HERMETIC SEALED, TO-3, 2 PIN |
文件页数: | 1/2页 |
文件大小: | 27K |
代理商: | APT30GT60AR |
相关PDF资料 |
PDF描述 |
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APT30GT60KR | 64 A, 600 V, N-CHANNEL IGBT, TO-220AB |
APT30GU60JU3 | 67 A, 600 V, N-CHANNEL IGBT |
APT30M17JFLL | 135 A, 300 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT30M19JVFR | 130 A, 300 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT30M19JVR | 130 A, 300 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
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APT30GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
APT30GT60BR_08 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT is a new generation of high voltage power IGBTs. |
APT30GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
APT30GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |