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参数资料
| 型号： | APT30M30B2FLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 154K |
| 代理商： | APT30M30B2FLLG |
050-7162
Rev
B
7-2004
APT30M30B2FLL_LFLL
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
300
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
400
100
10
1
16
12
8
4
0
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
10mS
20,000
10,000
1,000
100
10
300
100
10
1
VDS=150V
VDS=60V
VDS=240V
I
D = 100A
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 200V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 300V
R
G = 5
T
J = 125°C
L = 100H
40
60
80
100
120
140
160
40
60
80
100
120
140
160
40
60
80
100
120
140
160
0
5
10 15 20 25 30
35 40 45 50
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
200
180
160
140
120
100
80
60
40
20
0
5000
4000
300
2000
1000
0
V
DD = 200V
I
D = 100A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 200V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30M30B2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT30M30B2LL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT30M30B2LLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT30M30JFLL | 功能描述:MOSFET N-CH 300V 88A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT30M30JLL | 功能描述:MOSFET N-CH 300V 88A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
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