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参数资料
| 型号： | APT31N60BCS |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 276K |
| 代理商： | APT31N60BCS |
050-7238
Rev
A
1-2007
Typical Performance Curves
APT31N60B_SCS(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
5V
5.5V
6.5V
15 & 10V
100
90
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
V
DS> ID(ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, RDS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T
J = -55°C
T
J = +25°C
T
J = +125°C
NORMALIZED TO
V
GS = 10V @ 18A
V
GS=10V
V
GS=20V
100
90
80
70
60
50
40
30
20
10
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0
ID = 18A
VGS = 10V
4.5V
0.283
0.216
0.00355
0.727
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
6V
相关PDF资料 |
PDF描述 |
|---|---|
| APT31N60BCSG | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT32GU30B | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| APT32GU30B | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| APT32GU30BG | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT31N60BCSG | 功能描述:MOSFET N-CH 600V 31A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT31N60SCS | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT31N60SCSG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT31N80JC3 | 功能描述:MOSFET N-CH 800V 31A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:CoolMOS™ 标准包装:10 系列:* |
| APT3216 | 制造商:KINGBRIGHT 制造商全称:Kingbright Corporation 功能描述:SUPER THIN SMD CHIP LED 3216(1206) |
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