- 您现在的位置：买卖IC网 > PDF目录36711 > APT31N60SCS (MICROSEMI POWER PRODUCTS GROUP) 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT31N60SCS |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 276K |
| 代理商： | APT31N60SCS |
050-7238
Rev
A
1-2007
FINAL DATA SHEET WITH MOS 7 FORMAT
C
Power Semiconductors
O
O LMOS
TO-247
D3PAK
G
D
S
(S)
(B)
600V 31A 0.100
APT31N60BCS
APT31N60SCS
APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultra Low RDS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Popular TO-247 or Surface Mount D3 Package
Super Junction MOSFET
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 18A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1.2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V)
Avalanche Current 2
Repetitive Avalanche Energy 2
Single Pulse Avalanche Energy 3
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT31N60B_SCS(G)
600
31
19
93
±30
255
2.00
-55 to 150
260
50
11
1.2
800
MIN
TYP
MAX
600
0.100
10
TBD
±100
2.1
3
3.9
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
相关PDF资料 |
PDF描述 |
|---|---|
| APT31N60SCSG | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT31N60BCS | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT31N60BCSG | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT32GU30B | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| APT32GU30B | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT31N60SCSG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT31N80JC3 | 功能描述:MOSFET N-CH 800V 31A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:CoolMOS™ 标准包装:10 系列:* |
| APT3216 | 制造商:KINGBRIGHT 制造商全称:Kingbright Corporation 功能描述:SUPER THIN SMD CHIP LED 3216(1206) |
| APT3216-CAD58 | 制造商:Kingbright Corporation 功能描述:3.2 x 1.6 mm (1206) Red 120 15 mcd Clear 2 V SMT LED |
| APT3216CGCK | 功能描述:标准LED-SMD Green 570nm Water Clear 40mcd RoHS:否 制造商:Vishay Semiconductors 封装 / 箱体:0402 LED 大小:1 mm x 0.5 mm x 0.35 mm 照明颜色:Red 波长/色温:631 nm 透镜颜色/类型:Water Clear 正向电流:30 mA 正向电压:2 V 光强度:54 mcd 显示角:130 deg 系列:VLMx1500 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。