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参数资料
| 型号： | APT33GF120BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 52 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 76K |
| 代理商： | APT33GF120BR |
APT33GF120BR
052-6206
Rev
D
3-2003
MAXIMUM RATINGS (IGBT)
All Ratings: TC = 25°C unless otherwise specified.
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
Ultra Low Leakage Current
Low Tail Current
RBSOA and SCSOA Rated
High Freq. Switching to 20KHz
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.3
3.9
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT33GF120BR
1200
±20
52
33
104
66
65
297
-55 to 150
300
APT33GF120BR
1200V
52A
TO-247
G
C
E
G
C
E
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage
(RGE = 20K)
Gate Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ R
G = 11 TC = 125 °C
Single Pule Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
mJ
Watts
°C
Fast IGBT
相关PDF资料 |
PDF描述 |
|---|---|
| APT33GF120HR | 38 A, 1200 V, N-CHANNEL IGBT, TO-258 |
| APT33GF120LRDQ2G | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT33GF120B2RDQ2 | 64 A, 1200 V, N-CHANNEL IGBT |
| APT33GF120B2RDQ2 | 64 A, 1200 V, N-CHANNEL IGBT |
| APT33GF120LRDQ2 | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT33GF120BRG | 功能描述:IGBT 1200V 52A 297W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT33GF120HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs |
| APT33GF120LRD | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 1.2KV 52A 3-Pin(3+Tab) TO-264 |
| APT33GF120LRDQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT33GF120LRDQ2G | 功能描述:IGBT 1200V 64A 357W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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