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参数资料
| 型号： | APT33N90JCU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 6/6页 |
| 文件大小： | 136K |
| 代理商： | APT33N90JCU3 |
APT33N90JCU3
APT
33N90JCU3
–
Rev
0
August,
2009
www.microsemi.com
6 – 6
Typical Chopper diode performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Thermal
Imped
a
nce
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
I F
,Forwar
d
Curre
nt
(A
)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0
200
400
600
800 1000 1200
-diF/dt (A/s)
t rr
,R
ever
se
Re
cove
ry
Ti
m
e
(ns
)
TJ=125°C
VR=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Q
RR
,R
eve
rse
Re
cove
ry
Cha
rge
(C)
TJ=125°C
VR=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0
200
400
600
800 1000 1200
-diF/dt (A/s)
I RR
M
,Re
vers
e
Rec
o
ver
y
Curre
nt
(A
)
TJ=125°C
VR=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1
10
100
1000
VR, Reverse Voltage (V)
C,
C
a
pacit
a
nce
(pF)
0
10
20
30
40
50
25
50
75
100
125
150
175
Case Temperature (C)
I F
(A
V
)(
A
)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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