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参数资料
| 型号： | APT34N80B2C3 |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 178K |
| 代理商： | APT34N80B2C3 |
APT34N80B2C3_LC3
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
800
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
102
50
10
.1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
VDS=400V
VDS=160V
VDS=640V
I
D = 34A
20,000
10,000
1000
100
10
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
Typical Performance Curves
050-7147
Rev
E
6-2004
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
1020
30
4050
60
0
5
10 15 20 25 30 35 40 45 50
V
DD = 533V
I
D = 34A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
180
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
相关PDF资料 |
PDF描述 |
|---|---|
| APT34N80LC3 | 34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT3520BN-BUTT | 26 A, 350 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4020BN-BUTT | 26 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4020BN-GULLWING | 26 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4025BN-BUTT | 23 A, 400 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT34N80B2C3G | 功能描述:MOSFET N-CH 800V 34A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT34N80LC3 | 制造商:APT 功能描述:MOSFET |
| APT34N80LC3G | 功能描述:MOSFET N-CH 800V 34A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT3507DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 60A I(D) | CHIP |
| APT3507FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 60A I(D) | F-PACK SIP |
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