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参数资料
| 型号： | APT4020BVFR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 74K |
| 代理商： | APT4020BVFR |
DYNAMIC CHARACTERISTICS
APT4020B_SVFR(G)
050-5635
Rev
A
5-2006
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -23A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -23A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -23A, di/dt = 100A/s)
Peak Recovery Current
(IS = -23A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 23A @ 25°C
VGS = 15V
VDD = 200V
ID = 23A @ 25°C
RG = 1.6
MIN
TYP
MAX
2650
400
180
120
16
60
10
11
38
7
UNIT
pF
nC
ns
MIN
TYP
MAX
23
92
1.3
15
Tj = 25°C
?
Tj = 125°C
?
Tj = 25°C
?
Tj = 125°C
?
Tj = 25°C
?
Tj = 125°C
?
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.50
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 3.63mH, RG = 25, Peak IL = 23A
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
5dv/
dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
[Cont.]
di/
dt ≤ 700A/s
V
R ≤
V
DSS
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| APT4020SVFRG | 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4025BN | 23 A, 400 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT4020BN | 26 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT40GP60B2DQ2 | 100 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT4020BVFRG | 功能描述:MOSFET N-CH 400V 27A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT4020BVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT4020DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP |
| APT4020HN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 23.5A I(D) | TO-258ISO |
| APT4020SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 26A I(D) | TO-263AB |
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