- 您现在的位置：买卖IC网 > PDF目录48369 > APT40GP90B 100 A, 900 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT40GP90B |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 167K |
| 代理商： | APT40GP90B |
050-7479
Rev
A
5-2004
APT40GP90B
TYPICAL PERFORMANCE CURVES
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
SSOA Rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
900
3
4.5
6
3.2
3.9
2.7
250
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT40GP90B
900
±20
±30
100
50
160
160A @ 900V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7 IGBT
APT40GP90B
900V
相关PDF资料 |
PDF描述 |
|---|---|
| APT40GP90J | 68 A, 900 V, N-CHANNEL IGBT |
| APT40GP90J | 68 A, 900 V, N-CHANNEL IGBT |
| APT40GU60JU2 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40N60JCU3 | 40 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT45GP120J | 75 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT40GP90B2DQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT40GP90B2DQ2G | 功能描述:IGBT 900V 101A 543W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT40GP90BG | 功能描述:IGBT 900V 100A 543W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT40GP90J | 功能描述:IGBT 900V 68A 284W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 7® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT40GP90JDQ2 | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 900V 64A 4-Pin SOT-227 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi 功能描述:Microsemi APT40GP90JDQ2 IGBTs 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR 制造商:Microsemi 功能描述:Trans IGBT Chip N-CH 900V 64A 4-Pin SOT-227 |
发布紧急采购，3分钟左右您将得到回复。