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参数资料
| 型号： | APT40GP90JDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 900 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/9页 |
| 文件大小： | 455K |
| 代理商： | APT40GP90JDQ2 |
050-7491
Rev
A
9-2005
APT40GP90JDQ2
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 350A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (V
CE = 900V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 900V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT40GP90JDQ2
900
±30
64
27
160
160A @ 900V
284
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
900
3
4.5
6
3.2
3.9
2.7
350
1500
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
SSOA Rated
Low Gate Charge
Ultrafast Tail Current shutoff
POWER MOS 7 IGBT
C
E
G
900V
APT40GP90JDQ2
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
E
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT40GR120B | 功能描述:IGBT 1200V 88A 500W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT40GR120B2D30 | 功能描述:IGBT 1200V 88A 500W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT40GR120B2SCD10 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 88A 500W TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
| APT40GR120S | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 88A 500W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT40GT60BR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
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