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参数资料
| 型号： | APT40M70B2VFR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | T-MAX, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 150K |
| 代理商： | APT40M70B2VFR |
050-5850
Rev
A
3-2006
DYNAMIC CHARACTERISTICS
APT40M70B2_LVFR(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -57A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -57A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -57A, di/dt = 100A/s)
Peak Recovery Current
(IS = -57A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
57
228
1.3
15
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.6
Tj = 125°C
5.5
Tj = 25°C
15
Tj = 125°C
27
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.54mH, RG = 25, Peak IL = 57A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID57A
di/dt ≤ 700A/s V
R ≤400V
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 200V
I
D = 57A @ 25°C
V
GS = 15V
V
DD = 200V
I
D = 57A @ 25°C
R
G = 0.6
MIN
TYP
MAX
7410
8890
1140
1600
450
675
330
495
40
125
190
16
32
16
32
55
80
510
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT40M70B2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT40M70JVFR | 功能描述:MOSFET N-CH 400V 53A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT40M70JVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M70LVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT40M70LVFRG | 功能描述:MOSFET N-CH 400V 57A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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