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参数资料
| 型号： | APT5010JFLC |
| 元件分类： | JFETs |
| 英文描述： | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/2页 |
| 文件大小： | 38K |
| 代理商： | APT5010JFLC |
ADVANCED
TECHNICAL
INFORMATION
DYNAMIC CHARACTERISTICS
APT5010JFLC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
MIN
TYP
MAX
5200
1050
200
150
27
75
11
12
30
6
UNIT
pF
nC
ns
MIN
TYP
MAX
44
176
1.3
5
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.6
Tj = 125°C
5.5
Tj = 25°C
15
Tj = 125°C
27
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
MIN
TYP
MAX
0.28
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
050-5938
rev-
12-99
1 Repetitive Rating: Pulse width limited by maximum junction
4 Starting Tj = +25°C, L = 2.58mH, RG = 25W, Peak IL = 44A
temperature.
5 IS
ID [Cont.], di/
dt = 100A/s, VDD VDSS, Tj 150°C, RG = 2.0W,
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
VR = 200V.
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter
Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP) Package Outline
相关PDF资料 |
PDF描述 |
|---|---|
| APT5010JFLL | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JFLL | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JLLU2 | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JLLU3 | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JVRU2 | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5010JFLL | 功能描述:MOSFET N-CH 500V 41A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT5010JFLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5010JLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5010JLL | 功能描述:MOSFET N-CH 500V 41A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT5010JLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
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