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参数资料
| 型号： | APT5010JLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 5/5页 |
| 文件大小： | 175K |
| 代理商： | APT5010JLL |
APTC60VDAM24T3G
APT
C
60VDAM
24T
3G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
5 – 7
0.8
0.9
1.0
1.1
1.2
25
50
75
100
125
150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,Drai
n
to
S
o
u
rce
B
reakd
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
ed
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
Drai
n
to
So
u
rce
ON
resi
stance
(N
or
m
a
lize
d
)
VGS=10V
ID= 95A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thre
s
hold
Vo
lt
a
g
e
(N
or
m
a
lize
d
)
Maximum Safe Operating Area
10 ms
1 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
1000000
0
1020
304050
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0
40 80 120 160 200 240 280 320
Gate Charge (nC)
V
GS
,Gate
to
So
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=95A
TJ=25°C
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PDF描述 |
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| APT5010JLL | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| APT5010JVFR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
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