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参数资料
| 型号： | APT5014LVFRG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 117K |
| 代理商： | APT5014LVFRG |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
On State Drain Current 2 (V
DS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 18.5A)
Zero Gate Voltage Drain Current (V
DS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
050-5847
Rev
A
6-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
500
37
0.14
250
1000
±100
24
APT5014B2VFR_LVFR
500
37
148
±30
±40
450
3.6
-55 to 150
300
37
35
1600
G
D
S
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
T-MAX or TO-264 Package
Avalanche Energy Rated
Faster Switching
Lower Leakage
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5014B2VFR
APT5014LVFR
500V 37A 0.140
T-MAX
TO-264
B2VFR
LVFR
FAST RECOVERY BODY DIODE
POWER MOS V FREDFET
相关PDF资料 |
PDF描述 |
|---|---|
| APT5014LVFR | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5014B2VFR | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5014B2VFRG | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5014LVRG | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5014LVR | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5014LVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5014LVRG | 功能描述:MOSFET N-CH 500V 37A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5014SFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT5014SFLLG | 功能描述:MOSFET N-CH 500V 35A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5014SLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
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