参数资料
型号: APT5016BFLL
元件分类: JFETs
英文描述: 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封装: TO-247, 3 PIN
文件页数: 5/5页
文件大小: 203K
代理商: APT5016BFLL
050-7026
Rev
C
6-2004
APT5016BFLL_SFLL
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
90%
t
d(off)
T
J
= 125 C
10%
0
90%
tf
t
d(off)
Switching Energy
Gate Voltage
Drain Voltage
Drain Current
10 %
5 %
90%
t
r
t
d(on)
Drain Current
Drain Voltage
Gate Voltage
TJ = 125 C
Switching Energy
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT30DF60
相关PDF资料
PDF描述
APT5016SFLL 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5016SFLLG 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5016BFLL 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5016SFLL 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
APT501R1BNF 9 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
相关代理商/技术参数
参数描述
APT5016BFLL_04 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT5016BFLLG 功能描述:MOSFET N-CH 500V 30A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
APT5016BLL 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT5016BLL_03 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT5016BLLG 功能描述:MOSFET N-CH 500V 30A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件