- 您现在的位置：买卖IC网 > PDF目录36715 > APT5016SLL 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT5016SLL |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 107K |
| 代理商： | APT5016SLL |
VDS=250V
VDS=100V
VDS=400V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100
500
0
10
20
30
40
50
0
10
20
30
40
50 60
70 80
90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
120
10
1
16
14
12
10
8
6
4
2
0
10,000
5,000
1,000
100
10
200
100
50
10
5
1
TJ =+150°C
TJ =+25°C
Coss
Ciss
APT5016BLL - SLL
Crss
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
050-7005
Rev
C
11-2003
Typical Performance Curves
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
10
203040
50
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 333V
I
D
= 30A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
60
50
40
30
20
10
0
1000
800
600
400
200
0
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
I
D
= 30
相关PDF资料 |
PDF描述 |
|---|---|
| APT5017BVFRG | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5017SVFR | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5017SVFR | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5017SVFRG | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5017BVFR | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5016SLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube |
| APT5017 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5017BLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5017BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5017BVFRG | 功能描述:MOSFET N-CH 500V 30A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。