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参数资料
| 型号： | APT5018SLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 95K |
| 代理商： | APT5018SLL |
050-7004
Rev
D
7-2003
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT5018BLL - SLL
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Coss
Ciss
1
5
10
50
100
500
0
10
20
30
40
50
0
20
40
60
80
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
108
10
1
16
14
12
10
8
6
4
2
0
VDS=250V
VDS=100V
VDS=400V
I
D
= 27A
20,000
10,000
1,000
100
10
200
100
50
10
5
1
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
50
40
30
20
10
0
700
600
500
400
300
200
100
0
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 333V
I
D
= 27A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
0
10
20
30
40
50
0
10
20
30
40
50
0
1020
3040
50
0
5
10
15
20
25
30
35 40
45
50
Typical Performance Curves
相关PDF资料 |
PDF描述 |
|---|---|
| APT5018BLL | 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5018SLLG | 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5018SLL | 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5018BLL | 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5020BNFR | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5018SLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube |
| APT5019HVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT501R1AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.5A I(D) | TO-3 |
| APT501R1BN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-247AD |
| APT501R1BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.5A I(D) | TO-247AD |
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