参数资料
型号: APT5018SLL
元件分类: JFETs
英文描述: 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: D3PAK-3
文件页数: 2/5页
文件大小: 95K
代理商: APT5018SLL
050-7004
Rev
D
7-2003
DYNAMIC CHARACTERISTICS
APT5018BLL - SLL
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
27A
)
Reverse Recovery Time (I
S
= -I
D
27A
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D
27A
, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
27
100
1.3
544
8
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 27A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 250V
I
D
= 27A @ 25°C
R
G
= 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 333V, V
GS
= 15V
I
D
= 27A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 333V V
GS
= 15V
I
D
= 27A, R
G
= 5
MIN
TYP
MAX
2596
546
38
58
15
31
9
4
18
2
216
134
337
162
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.32mH, RG = 25, Peak IL = 27A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S
-I
D
27A di
/dt ≤ 700A/s V
R
V
DSS
T
J
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相关PDF资料
PDF描述
APT5018BLL 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5020BNFR 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5022BNFR 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5020HJN 28 A, 500 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APT5021HLL 20 A, 500 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
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