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参数资料
| 型号： | APT5024SVFRG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 116K |
| 代理商： | APT5024SVFRG |
DYNAMIC CHARACTERISTICS
APT5024BVFR_SVFR
050-5556
Rev
D
5-2004
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6
MIN
TYP
MAX
3600
4320
470
660
180
270
140
221
22
35
65
95
11
22
10
20
50
75
714
UNIT
pF
nC
ns
MIN
TYP
MAX
22
88
1.3
15
Tj = 25°C
250
Tj = 125°C
450
Tj = 25°C
1.8
Tj = 125°C
6.0
Tj = 25°C
14
Tj = 125°C
24
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 5.00mH, RG = 25, Peak IL = 22A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ ID-22A
di/dt ≤ 700A/s V
R ≤ 500V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.45
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
相关PDF资料 |
PDF描述 |
|---|---|
| APT5024SVFR | 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5024BVFRG | 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5024SVRG | 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5024BVR | 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5024SVR | 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5024SVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5024SVRG | 功能描述:MOSFET N-CH 500V 22A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5025AN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT5025BN | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-247 |
| APT5025BNG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:POWER MOSFET TRANSISTOR |
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