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参数资料
| 型号： | APT5030AVR |
| 元件分类： | JFETs |
| 英文描述： | 14.7 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 54K |
| 代理商： | APT5030AVR |
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
MIN
TYP
MAX
2650
3180
360
500
150
225
110
175
19
30
45
70
10
20
11
22
43
70
714
UNIT
pF
nC
ns
APT5030AVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5825
Rev
B
9-2001
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
14.7
58.8
1.3
410
6.5
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 8.89mH, RG = 25, Peak IL = 14.7A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.80
30
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| APT5030BN-GULLWING | 21 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4525BN-GULLWING | 23 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5025BN-GULLWING | 23 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5030BN-BUTT | 21 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4525BN-BUTT | 23 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5030BN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT5030BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 23A I(D) | TO-247AD |
| APT5030HN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 19A I(D) | TO-258ISO |
| APT5032CVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5040AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.5A I(D) | TO-3 |
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