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参数资料
| 型号： | APT50GN120L2DQ2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 134 A, 1200 V, N-CHANNEL IGBT |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 226K |
| 代理商： | APT50GN120L2DQ2 |
050-7606
Rev
B
10-2005
APT50GN120L2DQ2(G)
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 2.2
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
VGE = +15V
RG = 2.2
R
G = 2.2, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, TJ =125°C
R
G = 2.2
L = 100 H
35
30
25
20
15
10
5
0
120
100
80
60
40
20
0
25000
20000
15000
10000
5000
0
50000
40000
30000
20000
10000
0
V
GE = 15V
V
GE =15V,TJ=125°C
VCE = 800V
VGE = +15V
RG = 2.2
VCE = 800V
VGE = +15V
RG = 2.2
E
on2,100A
E
off,100A
E
off,50A
E
on2,50A
E
on2,25A
E
off,25A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
VCE = 800V
VGE = +15V
TJ = 125°C
R
G = 2.2, L = 100H, VCE = 800V
500
400
300
200
100
0
300
250
200
150
100
50
0
14000
12000
10000
8000
6000
4000
2000
0
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25°C,VGE =15V
T
J = 125°C,VGE =15V
20 30 40 50 60
70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30
40 50 60 70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
0
10
20
30
40
50
0
25
50
75
100
125
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GN120L2DQ2G | 功能描述:IGBT 1200V 134A 543W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GN60B | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60BDQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT |
| APT50GN60BDQ2G | 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GN60BG | 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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