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参数资料
| 型号： | APT50GP60J |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 3/6页 |
| 文件大小： | 98K |
| 代理商： | APT50GP60J |
050-7435
Rev
A
4-2003
APT50GP60J
TYPICAL PERFORMANCE CURVES
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,
COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
150
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC=-55°C
TC=125°C
TC=25°C
VCE=480V
VCE=300V
VCE=120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 50A
TJ = 25°C
TJ = -55°C
TJ = 125°C
TC=-55°C
TC=25°C
TC=125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 25A
IC = 50A
IC =100A
IC = 25A
70
60
50
40
30
20
10
0
100
80
60
40
20
0
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3
2.5
2
1.5
1
0.5
0
140
120
100
80
60
40
20
0
IC = 50A
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| APT50GP60J | 100 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
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|---|---|
| APT50GP60JDQ2 | 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 7® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GP60LDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
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