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参数资料
| 型号： | APT50GP60J |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 5/6页 |
| 文件大小： | 98K |
| 代理商： | APT50GP60J |
050-7435
Rev
A
4-2003
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10,000
5,000
1,000
500
100
50
10
200
180
160
140
120
100
180
160
140
120
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Cies
Coes
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R θ
=
++
+
=
+
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10
20
30
40
50
60
70
80
210
100
50
10
F
MAX
,OPERATING
FREQUENCY
(kHz)
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5
APT50GP60J
TYPICAL PERFORMANCE CURVES
0.0775
0.216
0.0855
0.0158F
0.313F
4.49F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
0.20
0.16
0.12
0.08
0.04
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GP60JDQ2 | 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 7® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GP60LDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
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