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参数资料
| 型号： | APT50GP90B2DF2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 900 V, N-CHANNEL IGBT |
| 封装： | T-MAX, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 31K |
| 代理商： | APT50GP90B2DF2 |
APTM100VDA35T3G
APTM100VDA35
T
3G–
Rev
0
Septem
ber,
2009
www.microsemi.com
3 – 7
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Transistor
0.32
RthJC
Junction to Case Thermal Resistance
Chopper diode
1.2
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
110
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
B/B
TC=100°C
4
%
=
T
B
R
T
1
exp
25
85
/
25
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
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PDF描述 |
|---|---|
| APT50GP90J | 80 A, 900 V, N-CHANNEL IGBT |
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| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT60BRDQ2G | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ2 | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120L | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GS60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
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