- 您现在的位置：买卖IC网 > PDF目录48370 > APT50GS60BRDL (MICROSEMI POWER PRODUCTS GROUP) 93 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT50GS60BRDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 257K |
| 代理商： | APT50GS60BRDL |
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 124°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 50A
Forward Voltage
I
F = 100A
I
F = 50A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.25
1.6
2.0
1.25
APT50GS60BRDL(G)
50
150
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
52
-
399
-
1498
-
9
-
649
-
3734
-
13
-
284
-
5134
-
34
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 50A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F =50A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 50A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
DYNAMIC CHARACTERISTICS
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
0.316
0.312
0.00467
0.1483
APT50GS60BRDL(G)
052-6352
Rev
A
7-2008
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT60BRDQ1G | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ1G | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ1 | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ2 | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50M60JVR | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT50GS60BRDQ2G | 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GS60BRG | 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GS60SR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
发布紧急采购，3分钟左右您将得到回复。