参数资料
型号: APT50GT120B2R
元件分类: IGBT 晶体管
英文描述: 106 A, 1200 V, N-CHANNEL IGBT, TO-247
封装: TO-247, TMAX, 3 PIN
文件页数: 1/6页
文件大小: 395K
代理商: APT50GT120B2R
052-6270
Rev
A
8-2005
APT50GT120B2R(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT50GT120B2R(G)
1200
±30
106
50
150
150A @ 1200V
694
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
C
E
1200V
APT50GT120B2R
APT50GT120B2RG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 50KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Intergrated Gate Resistor: Low EMI, High Reliability
Thunderbolt IGBT
T-MaxTM
G
C
E
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 3mA)
Gate Threshold Voltage (V
CE = VGE, I C = 2mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.7
4.0
300
TBD
300
5
相关PDF资料
PDF描述
APT50GT120B2RG 106 A, 1200 V, N-CHANNEL IGBT, TO-247
APT50GT120B2R 94 A, 1200 V, N-CHANNEL IGBT, TO-247
APT50GT120LRG 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA
APT50GT120LR 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA
APT50GT120JRDQ2 72 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APT50GT120B2RDL 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode IGBT
APT50GT120B2RDLG 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GT120B2RDQ2G 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GT120B2RG 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GT120JRDQ2 功能描述:IGBT 1200V 72A 379W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Thunderbolt IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B