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参数资料
型号： APT50GT120JRDQ2
元件分类： IGBT 晶体管
英文描述： 72 A, 1200 V, N-CHANNEL IGBT
封装： ISOTOP-4
文件页数： 2/9页
文件大小： 450K
代理商： APT50GT120JRDQ2
052-6278
Rev
A
9-2005
APT50GT120JRDQ2
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 50A
T
J = 150°C, RG = 1.0
7
, V
GE =
15V, L = 100H, V
CE = 1200V
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 1.0
7
T
J = +25°C
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 1.0
7
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
2500
250
155
7.5
240
20
110
150
23
50
215
26
3585
4835
1910
23
50
255
50
3580
6970
2750
UNIT
pF
V
nC
A
ns
J
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance, not including RG(int) nor gate driver impedance.
APT Reserves the right to change, without notice, the specications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
Volts
MIN
TYP
MAX
.33
1.1
29.2
2500
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Symbol
RθJC
W
T
V
Isolation
相关PDF资料
PDF描述
APT50GT120JRDQ2 72 A, 1200 V, N-CHANNEL IGBT
APT50GT120JU2 75 A, 1200 V, N-CHANNEL IGBT
APT50GT120JU3 75 A, 1200 V, N-CHANNEL IGBT
APT50GT120JU3 75 A, 1200 V, N-CHANNEL IGBT
APT50GT120LRDQ2 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA
相关代理商/技术参数
参数描述
APT50GT120JU2 功能描述:IGBT 1200V 75A 347W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B
APT50GT120JU3 功能描述:IGBT 1200V 75A 347W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Trench + Field Stop IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B
APT50GT120LR 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT
APT50GT120LRDQ2G 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GT120LRG 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT
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