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参数资料
| 型号： | APT50GT120JU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 3/7页 |
| 文件大小： | 608K |
| 代理商： | APT50GT120JU3 |
APT50GT120JU3
A
PT
50G
T
120J
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
3- 7
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
2.0
2.5
IF = 60A
2.3
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
VR = 1200V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 1200V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
32
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
31
Tj = 25°C
370
trr
Reverse Recovery Time
Tj = 125°C
500
ns
Tj = 25°C
5
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
12
A
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/s
Tj = 125°C
3450
nC
trr
Reverse Recovery Time
220
ns
Qrr
Reverse Recovery Charge
4650
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 800V
di/dt =1000A/s
Tj = 125°C
37
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.36
RthJC
Junction to Case
Diode
1.1
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
Typical IGBT Performance Curve
0
10
20
30
40
50
60
0
10
203040 50
607080
I
C (A)
Fm
a
x,
Ope
ra
ti
n
g
Fr
e
que
n
cy
(
kH
z)
V
CE=600V
D=50%
R
G=18
T
J=125°C
Operating Frequency vs Collector Current
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120LRDQ2 | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GT120LRDQ2G | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GT60BR | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60SR | 110 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120LR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
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