- 您现在的位置：买卖IC网 > PDF目录57947 > APT50GT120JU3 (MICROSEMI CORP) 75 A, 1200 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APT50GT120JU3 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 7/7页 |
| 文件大小： | 505K |
| 代理商： | APT50GT120JU3 |
APT50GT120JU3
A
P
T
50G
T
120J
U
3–
R
ev
1
J
une
,2006
www.microsemi.com
7 - 7
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Emitter
Gate
Collector
Anode
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT60BRDQ2G | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ2 | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50M38JLL | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50JLC | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60JNF | 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120LR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
发布紧急采购，3分钟左右您将得到回复。