- 您现在的位置：买卖IC网 > PDF目录36718 > APT50GT120LRDQ2 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA PDF资料下载
参数资料
| 型号： | APT50GT120LRDQ2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 434K |
| 代理商： | APT50GT120LRDQ2 |
052-6271
Rev
A
8-2005
APT50GT120LRDQ2(G)
TYPICAL PERFORMANCE CURVES
0.20
0.16
0.12
0.08
0.04
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
4,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200
400 600
800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80 90 100
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 1
140
50
10
4
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.0814
0.0993
0.0151
0.259
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT120LRDQ2G | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GT60BR | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60SR | 110 A, 600 V, N-CHANNEL IGBT |
| APT50M38JFLL | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M38JFLL | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
发布紧急采购，3分钟左右您将得到回复。