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参数资料
| 型号： | APT50GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 220K |
| 代理商： | APT50GT60BR |
052-6273
Re
v
C
6-2008
APT50GT60BR_SR(G)
TYPICAL PERFORMANCE CURVES
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θJC
,THERMAL
IMPED
ANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
10-5
10-4
10-3
10-2
10-1
1.0
4,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C
,CAP
A
CIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure17,CapacitancevsCollector-To-EmitterVoltage
Figure18,MinimimSwitchingSafeOperatingArea
0
10
20
30
40
50
0
100
200
300
400
500
600
700
FIGURE19b,TRANSIENTTHERMALIMPEDANCEMODEL
10 20
30
40
50
60
70
80
90 100
F
MAX
,OPERA
TING
FREQ
UENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure20,OperatingFrequencyvsCollectorCurrent
120
50
10
2
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 4.3
0.114
0.113
0.0057
0.0276
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EX
T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT50GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ1G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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