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参数资料
| 型号： | APT50GT60BRDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 172K |
| 代理商： | APT50GT60BRDL |
052-6359
Re
v
A
7-2008
APT50GT60BRDL(G)
TYPICAL PERFORMANCE CURVES
TO
-24
7
G
C
E
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 2mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT50GT60BRDL(G)
600
±30
110
52
150
150A @ 600V
446
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
7 @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
1.7
2.0
2.5
2.2
50
1250
120
Resonant Mode Combi IGBT
The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of-
fers superior ruggedness and ultrafast switching speed.
Features
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
Low forward Diode Voltage (V
F)
Ultrasoft Recovery Diode
SSOA Rated
RoHS Compliant
Typical Applications
Induction Heating
Welding
Medical
High Power Telecom
Resonant Mode Phase Shifted
Bridge
600V
APT50GT60BRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Microsemi Website - http://www.microsemi.com
G
C
E
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT60BR | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BRG | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60SRG | 110 A, 600 V, N-CHANNEL IGBT |
| APT50GT60SR | 110 A, 600 V, N-CHANNEL IGBT |
| APT50M50JFLC | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT50GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ1G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ2G | 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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